P-N Junction 1D
Application ID: 14621
This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by Kramer and Hitchon.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Спецификация and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.