Thermal Analysis of a Bipolar Transistor
Application ID: 19701
This model demonstrates how to couple the Semiconductor interface to the Heat Transfer in Solids interface. A thermal analysis is performed on the existing bipolar transistor model in the case when the device is operated in the active-forward configuration.
The Semiconductor interface calculates the carrier dynamics and currents within the device and outputs a heating term due to electrical processes. This heating term is used as a heat source by the Heat Transfer in Solids interface to calculate the temperature distribution throughout the device.
The temperature distribution from the Heat Transfer in Solids interface is used to specify the lattice temperature in the Semiconductor interface, which alters the electrical properties and causes changes to the heating term, resulting in a fully coupled model.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
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