InGaN/AlGaN Double Heterostructure LED
Application ID: 20299
This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted recombination processes. This results in a sub-linear increase in emission intensity with increasing current, which is a common characteristic of LED devices known as LED droop. Note that polarization charge effects and quantum confinement effects within the thin active region are not included in the model.
This model example illustrates applications of this type that would nominally be built using the following products:Модуль Полупроводники
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
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